PART |
Description |
Maker |
TPD1009S E006883 |
THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
UPC1352C |
BIPOLAR ANALOG INTERGRATED CIRCUIT
|
NEC
|
KIA75S358F-15 |
BIPOLAR LINEAR INTERGRATED CIRCUIT
|
KEC(Korea Electronics)
|
T6963CDS |
TOSHIBA CMOS DIGITAL INTERGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
TC9320F |
TOSHIBA CMOS DIGITAL INTERGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
TC40161BP TC40162BP TC40160BP |
D52 - BACKSHELL ENVIRON EMI-RFI 90 DEG M C2MOS DIGITAL INTERGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
SI4205-BM E-GSM900 GSM850 SI4205-BMR DCS1800 |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, BGA32 8 X 8 MM, LGA-32 Single 8x8 mm package CMOS process technology Intergrated GSM/GPRS transceiver including
|
Silicon Laboratories, Inc.
|
UPD23C32000A UPDA23C32000 |
MOS IC MOS INTEGRATED CIRCUIT
|
NEC
|
LS7226 LS7225 |
DIGITAL LOCK CIRCUIT with Tamper Output IC,LOCK (CODE) CIRCUIT,MOS,DIP,14PIN
|
LSI Corporation LSI[LSI Computer Systems]
|
BB301C BB301 |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|